In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates low temperature during the process, copper chloride vapor treatment was introduced in between second third stages to enhance properties. X-ray diffraction scanning electron microscopy demonstrate that drastic changes occur after this recrystallization yielding with much larger grains. Secondary ion mass spectrometry shows depth profile of many elements is not (such as Cu, In Se) while others change dramatically Ga Na). Because competing effects these changes, all parameters solar cells are enhanced, an increase 15% device efficiency at most.